Path: Top -> Journal -> Telkomnika -> 2020 -> Vol 18, No 5, October
A new factor for fabrication technologies evaluation for silicon nanowire transistors
By : Yasir Hashim, Mohammed Nazmus Shakib, Telkomnika
Created : 2021-01-25, with 1 files
Keyword : AFM; IC; nanolithography; SiNWT; transistor;
Url : http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/12121
Document Source : web
This paper reviews the fabrication technologies of silicon nanowire transistors (SiNWTs) and rapidly development in this area, as this paper presents various types of SiNWT structures, development of SiNWT properties and different applications until nowadays. This research provides a good comparison among fabrication technologies of SiNWTs depending on a new factor DIF, this factor depends on the size of channel and power consumption in channel. As a result of this comparison, the best technology to use in the future to fabricate silicon nano transistors for future ICs is AFM nanolithography.
| Property | Value |
|---|---|
| Publisher ID | gdlhub |
| Organization | Telkomnika |
| Contact Name | Herti Yani, S.Kom |
| Address | Jln. Jenderal Sudirman |
| City | Jambi |
| Region | Jambi |
| Country | Indonesia |
| Phone | 0741-35095 |
| Fax | 0741-35093 |
| Administrator E-mail | elibrarystikom@gmail.com |
| CKO E-mail | elibrarystikom@gmail.com |
Print ...
Contributor...
- , Editor: sukadi
Downnload...
Download for member only.
12121-46543-1-PB
File : 12121-46543-1-PB.pdf
(682482 bytes)