GDL

Journal from gdlhub / 2019-07-26 16:41:19
Oleh : Yousif Atalla, Yasir Hashim, Abdul Nasir Abd Ghafar, Waheb A. Jabar, Telkomnika
Dibuat : 2019-07-25, dengan 1 file

Keyword : FinFET, nano-sensor, oxide thickness, temperature
Url : http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/11798
Sumber pengambilan dokumen : WEB

This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate oxide thickness values (Tox = 1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET’s temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (∆I) within a working voltage range of 0–5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1–5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm.

Beri Komentar ?#(0) | Bookmark

Properti	Nilai Properti
ID Publisher	gdlhub
Organisasi	Telkomnika
Nama Kontak	Herti Yani, S.Kom
Alamat	Jln. Jenderal Sudirman
Kota	Jambi
Daerah	Jambi
Negara	Indonesia
Telepon	0741-35095
Fax	0741-35093
E-mail Administrator	elibrarystikom@gmail.com
E-mail CKO	elibrarystikom@gmail.com