Path: Top -> Journal -> Telkomnika -> 2019 -> Vol 17, No 6, Desember 2019

Characterization of silicon nanowire transistor

Journal from gdlhub / 2020-01-09 10:02:11
Oleh : Hani Taha Al Ariqi, Waheb A. Jabbar, Yasir Hashim, Hadi Bin Manap, Telkomnika
Dibuat : 2020-01-09, dengan 1 file

Keyword : channel diameter, temperature sensitivity, DIBL, SiNWT, SS, V.th
Url : http://journal.uad.ac.id/index.php/TELKOMNIKA/issue/view/640
Sumber pengambilan dokumen : web

This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends

on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as

a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive

simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage

characteristics with different values of temperature and with a varying diameter of the Nano wire channel

(D.ch = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is

suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated,

the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter.

We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of

SiNWT including, Subthreshold Swing (SS), Threshold voltage (V.th), and Drain-induced barrier lowering

(DIBL), which were proportionally increased with the operating temperature.

Beri Komentar ?#(0) | Bookmark

PropertiNilai Properti
ID Publishergdlhub
OrganisasiTelkomnika
Nama KontakHerti Yani, S.Kom
AlamatJln. Jenderal Sudirman
KotaJambi
DaerahJambi
NegaraIndonesia
Telepon0741-35095
Fax0741-35093
E-mail Administratorelibrarystikom@gmail.com
E-mail CKOelibrarystikom@gmail.com

Print ...

Kontributor...

  • , Editor: sukadi

Download...