GDL

Journal from gdlhub / 2020-01-09 10:04:52
Oleh : Ahmed M. Dinar, AS Mohd Zain, F. Salehuddin, Mowafak K. Mohsen, Mothana L. Attiah, M. K. Abdulhameed, Telkomnika
Dibuat : 2020-01-09, dengan 1 file

Keyword : high-k materials, ISFET sensitivity, stern layer, titanium dioxide
Url : http://journal.uad.ac.id/index.php/TELKOMNIKA/issue/view/640
Sumber pengambilan dokumen : web

High-k materials as a STERN Layer for Ion-Sensitive-Field-Effect-Transistor (ISFET) have

improved ISFET sensitivity and stability. These materials decrease leakage current and increase

capacitance of the ISFET gate toward highest current sensitivity. So far, many high-k materials have been

utilized for ISFET, yet they were examined individually, or using numerical solutions rather than using

integrated TCAD environment. Exploiting TCAD environment leads to extract ISFET equivalent circuit

parameters and performs full analysis for both device and circuit. In this study we introduce a

comprehensive investigation of different high-k material, Tio2, Ta2O5, ZrO2, Al2O3, HfO2 and Si3N4 as well

as normal silicon dioxide and their effects on ISFET sensitivity and stability. This was implemented by

developing commercial Silvaco TCAD rather than expensive real fabrication. The results confirm that

employing high-k materials in ISFET outperform normal silicon dioxide in terms of sensitivity and stability.

Further analysis revealed that Titanium dioxide showed the highest sensitivity followed by two groups

HfO2, Ta2O5 and ZrO2, Al2O3 respectively. Another notable exception of Si3N4 that is less than other

materials, but still have higher sensitivity than normal silicon dioxide. We believe that this study opens new

directions for further analysis and optimization prior to the real cost-ineffective fabrication.

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